- 您现在的位置：买卖IC网 > Sheet目录142 > RB521S30,115 (NXP Semiconductors)DIODE SCHOTTKY 30V 200MA SOD523
 RB521S30_1 ? NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 5 of 12 NXP Semiconductors RB521S30 200 mA low VF MEGA Schottky barrier recti?er 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤0.02. Table 7. Characteristics Tj =25°C unless otherwise speci?ed. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF= 0.1 mA - 130 190 mV IF= 1 mA - 190 250 mV IF= 10 mA - 255 300 mV IF= 100 mA - 355 410 mV IF= 200 mA - 420 500 mV IR reverse current VR= 10 V - 2.5 30μA Cd diode capacitancef = 1 MHz; VR=1V - 2025pF (1) Tj = 150 °C (2) Tj = 125 °C (3) Tj =85°C (4) Tj=25°C (5) Tj=?40°C (1) Tj= 125°C (2) Tj=85°C (3) Tj=25°C (4) Tj=?40°C Fig 3. Forward current as a function of forward voltage; typical values Fig 4. Reverse current as a function of reverse voltage; typical values 006aab712 10?2 10?3 1 10?1 10 IF (A) 10?4 VF (V) 0.0 1.00.2 0.4 0.6 0.8 (1) (2) (3)(4) (5) 006aab713 VR (V) 03010 20 10?2 IR (A) 10?3 10?4 10?5 10?6 10?7 10?8 10?9 (1) (2) (3) (4) |